VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK

The Black Silicon Method H: the Effect of Mask Material and Loading on the Reactive Ion Etching of Deep Silicon Trenches

Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher (RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infmite selectivity. When the aspect ratio of the trenches is beyond five, PIE lag is found to be an important effect. ...

Characterization and Modeling of Wafer and Die Level Uniformity in Deep Reactive Ion Etching (DRIE)

Wafer and die level uniformity effects in Deep Reactive Ion Etching (DRIE) are quantitatively modeled and characterized. A two-level etching model has been developed to predict non-uniformities in high-speed rotating microstructures. The separation of wafer level and die level effects is achieved by sequentially etching wafers with uniformly distributed holes. The wafer level loadings range fro...

Methodology to analyse small silicon samples by glow discharge mass spectrometry using a thin wafer mask

Glow discharge mass spectrometry (GDMS) is widely used for trace element analysis of bulk solid samples. The geometry of the GD source limits the minimum size of the sample, which for the instrument used in this work (ThermoElementGD) is 20 mm in diameter. From time to time, there is the need to analyse smaller samples with this technique, and we present here a methodology to analyse samples of...

Deep Reactive Ion Etching (DRIE)

High Aspect-ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching (drie) Technique

This work is dedicated to my dear grandmother, who has not only taught me that learning is a lifelong matter, but has also inspired me by being an example herself even at the age of 80. for the help on design and modeling; and all the members of the IMEMS group for creating a collaborative and pleasant atmosphere. Special thanks to all the MiRC Cleanroom staff, who I am greatly indebted to, for...

Profile Control of a Borosilicate-Glass Groove Formed by Deep Reactive Ion Etching

Deep reactive ion etching (DRIE) of borosilicate glass and profile control of an etched groove are reported. DRIE was carried out using an anodically bonded silicon wafer as an etching mask. We controlled the groove profile, namely improving its sidewall angle, by removing excessively thick polymer film produced by carbonfluoride etching gases during DRIE. Two fabrication processes were experim...